• Enhanced Raman gain coefficients (under steady-state and transient regimes) of semiconductor magnetoplasmas

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      https://www.ias.ac.in/article/fulltext/pram/095/0208

    • Keywords

       

      Laser–plasma interaction; Raman gain; threshold intensity; semiconductor plasmas.

    • Abstract

       

      Assuming the origination of stimulated Raman scattering (SRS) in Raman susceptibility, we obtain expressions for Raman gain coefficients (under steady-state and transient regimes) of semiconductor magnetoplasmas under various geometrical configurations. The threshold value of excitation intensity and most favourable value of pulse duration (above which transient Raman gain vanishes) are estimated. For numerical calculations, we consider n-InSb crystal at 77K temperature as a Raman-active medium exposed to a frequencydoubled pulsed CO$_2$ laser. The variation of Raman gain coefficients on doping concentration, magnetostatic field and its inclination, scattering angle and pump pulse duration have been explored in detail with an aim to determinesuitable values of these controllable parameters to enhance Raman gain coefficients at lower threshold intensities and to establish the suitability of semiconductor magnetoplasmas as hosts for compression of scattered pulses and fabrication of efficient Raman amplifiers and oscillators based on Raman nonlinearities.

    • Author Affiliations

       

      JAIVIR SINGH1 SUNITA DAHIYA1 MANJEET SINGH2

      1. Department of Physics, Baba Mastnath University, Asthal Bohar, Rohtak 124 021, India
      2. Department of Physics, Government College, Matanhail, Jhajjar 124 106, India
    • Dates

       
  • Pramana – Journal of Physics | News

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