• Cobalt ferrite as an active material for resistive random-access memory

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    • Keywords


      Active material; conducting filament model; electrode; metal/insulator/metal; resistive random access memory.

    • Abstract


      Cobalt ferrite is one of the candidates from spinel ferrite family and can be termed as an active material in resistive random-access memory (RRAM) cell because of its excellent performance in switching devices. In thisarticle, the review on the role of cobalt ferrite as an active insulator material for metal/insulator/metal (M/I/M) configuration is discussed. The mode of metal/CoFe$_2$O$_4$/metal memory cell depends on the electrode material. The metal/CoFe$_2$O$_4$/metal memory cell exhibits either unipolar resistive switching or bipolar resistive switching characteristics. The switching mechanism of the metal/CoFe$_2$O$_4$/metal memory cell can be well understood usingconducting filament model. The review suggests that the switching cycle characteristics ca

    • Author Affiliations



      1. K.J. Somaiya College of Science and Commerce, Mumbai 400 077, India
      2. Composite Material Laboratory, Rajaram College, Kolhapur 416 004, India
      3. Department of Physics, Rajaram College, Kolhapur 416 004, India
    • Dates

  • Pramana – Journal of Physics | News

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      Posted on July 25, 2019

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