• Cobalt ferrite as an active material for resistive random-access memory

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    • Keywords

       

      Active material; conducting filament model; electrode; metal/insulator/metal; resistive random access memory.

    • Abstract

       

      Cobalt ferrite is one of the candidates from spinel ferrite family and can be termed as an active material in resistive random-access memory (RRAM) cell because of its excellent performance in switching devices. In thisarticle, the review on the role of cobalt ferrite as an active insulator material for metal/insulator/metal (M/I/M) configuration is discussed. The mode of metal/CoFe$_2$O$_4$/metal memory cell depends on the electrode material. The metal/CoFe$_2$O$_4$/metal memory cell exhibits either unipolar resistive switching or bipolar resistive switching characteristics. The switching mechanism of the metal/CoFe$_2$O$_4$/metal memory cell can be well understood usingconducting filament model. The review suggests that the switching cycle characteristics ca

    • Author Affiliations

       

      KETANKUMAR GAYAKVAD1 2 K K PATANKAR2 3

      1. K.J. Somaiya College of Science and Commerce, Mumbai 400 077, India
      2. Composite Material Laboratory, Rajaram College, Kolhapur 416 004, India
      3. Department of Physics, Rajaram College, Kolhapur 416 004, India
    • Dates

       
  • Pramana – Journal of Physics | News

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