• TCAD simulation study on reliability issue of heterojunction heterodielectric FinFET: Effect of interface trap charge, BOX height and temperature

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    • Keywords


      FinFET; heterodielectric BOX; heterojunction; interface trap charge; temperature.

    • Abstract


      In this paper, a heterojunction FinFET on heterodielectric BOX is proposed and this device is named as heterojunction heterodielctric BOX (HJHDB) FinFET, to eliminate the effect of trap density. The interface trap charge is considered at the interface of Si-HfO$_2$ in technology computer aided design (TCAD) simulator. The effect of trap charges on transfer characteristics, surface potential, subthreshold swing (SS) and threshold voltage are investigated for both HJHDB FinFET and conventional FinFET (C-FinFET) taking box height as a parameter. Such analysis is also demonstrated by varying the temperature in wide ranges for both the devices. It is seen that there is no effect of fixed trap in HJHDB FinFET even at high temperature, whereas a noticeable amount of trap effect isobserved for C-FinFET. Furthermore, the effect of trap level on various electrical parameters is presented for both devices and an insignificant amount of trap level variation is observed for HJHDB FinFET. On the other hand, a visible impact of trap level is observed in C-FinFET.

    • Author Affiliations



      1. School of Electronics Engineering, Vellore Institute of Technology, Andhra Pradesh University, Amravati 522 237, India
      2. Department of Electronics and Communication Engineering, Malaviya National Institute of Technology, Jaipur 302 017, India
    • Dates

  • Pramana – Journal of Physics | News

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