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Graphene field effect transistor; gate leakage current; screen printing; mobility

Exploiting the advantages of additive patterning process over complex fabrication processes, herein we report the fabrication of field-effect transistor (FET) using the screen-printing method. The graphene conductive composite dielectric ink as the channel and the dielectric layer respectively was screen printed on cellulose paper substrate. The fabricated device shows the hole and electron mobility of $\rm{135 cm^{2}/V s}$ and $\rm{98 cm^{2}/V s}$ respectively with an ultra-low leakage current of $\sim 25 \rm{nA}$. The proposed technique can be used for large-scale roll-to-roll commercial manufacturing of disposable FET-based sensors such as temperature and IR sensors, health monitoring devices etc.

KAPIL BHATT¹ SANDEEP KUMAR¹ C C TRIPATHI¹

1. RF & Flexible Microelectronic Research Laboratory, University Institute of Engineering & Technology, Kurukshetra University, Kurukshetra 136 119, India

Published

25 January 2020

Manuscript received

10 July 2019

Manuscript revised

25 November 2019

Accepted

5 December 2019

Early published

Unedited version published online

Final version published online

20 January 2020