• High-performance ultra-low leakage current graphene-based screen-printed field-effect transistor on paper substrate

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      https://www.ias.ac.in/article/fulltext/pram/094/0031

    • Keywords

       

      Graphene field effect transistor; gate leakage current; screen printing; mobility

    • Abstract

       

      Exploiting the advantages of additive patterning process over complex fabrication processes, herein we report the fabrication of field-effect transistor (FET) using the screen-printing method. The graphene conductive composite dielectric ink as the channel and the dielectric layer respectively was screen printed on cellulose paper substrate. The fabricated device shows the hole and electron mobility of $\rm{135 cm^{2}/V s}$ and $\rm{98 cm^{2}/V s}$ respectively with an ultra-low leakage current of $\sim 25 \rm{nA}$. The proposed technique can be used for large-scale roll-to-roll commercial manufacturing of disposable FET-based sensors such as temperature and IR sensors, health monitoring devices etc.

    • Author Affiliations

       

      KAPIL BHATT1 SANDEEP KUMAR1 C C TRIPATHI1

      1. RF & Flexible Microelectronic Research Laboratory, University Institute of Engineering & Technology, Kurukshetra University, Kurukshetra 136 119, India
    • Dates

       
  • Pramana – Journal of Physics | News

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      Posted on July 25, 2019

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