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Schottky junction; Schottky barrier diode; semiconductor; thermal emission

After the carrier drift velocity at the semiconductor/metal interface is considered, current transport in Schottky diodes under a forward electric field is physically modelled. This model reveals that the ideality factor can be physically originated from the drift velocity and the drift velocity can also reduce the effective Schottky barrier height. This proposed model predicts that both the ideality factor and the Schottky barrier height depend on temperature, voltage and doping density, which agree well with the experimental results reported in the literature. The proposed diode current model also predicts a linear dependent relation between the reciprocal of the ideality factor and the effective Schottky barrier height, which is validated by experimental results. Such a model is useful to better understand the thermionic emission current physically in semiconductor/metal contact. It is also useful to characterise the material properties by using the ideality factor.

LING-FENG MAO¹

1. School of Computer and Communication Engineering, University of Science and Technology Beijing, 30 Xueyuan Road, Haidian District, Beijing 100083, People’s Republic of China

Published

1 January 2020

Manuscript received

23 July 2019

Manuscript revised

18 August 2019

Accepted

22 August 2019

Early published

Unedited version published online

Final version published online

18 December 2019