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    • Impact of optical gain broadening on characteristics of response function in the presence and absence of tunnelling injection for quantum dot semiconductor lasers

      YASIN YEKTA KIA ESFANDIAR RAJAEI

      Research Article Volume 89 Issue 3 September 2017 Article ID 0047

    • Fulltext

       

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      Permanent link:
      https://www.ias.ac.in/article/fulltext/pram/089/03/0047

    • Keywords

       

      Quantum dot; tunnelling injection; inhomogeneous; homogeneous; modulation

    • Abstract

       

      In this paper, the dynamics of QD semiconductor lasers is investigated numerically. Large and small signal modulations for various inhomogeneous broadenings have been studied. Computationally, we have solved the rate equation for two-state InAs QD semiconductor lasers and the effect of inhomogeneous broadening on response function and output power due to variation of QD parameters have been investigated in the presence and absence of tunnelling. Also, we have studied these effects on optical gain and output power. We have shown that tunnelling injection enhances the efficiency of the semiconductor laser.

    • Author Affiliations

       

      YASIN YEKTA KIA1 ESFANDIAR RAJAEI1

      1. Department of Physics, Faculty of Science, University of Guilan, Rasht, Iran

    • Dates

       
      Published
      19 September 2017
      Manuscript received
      16 February 2017
      Manuscript revised
      15 April 2017
      Accepted
      27 May 2017
      Early published
      Unedited version published online
      Final version published online
      11 September 2017

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