Short-channel drain current model for asymmetric heavily/lightly doped DG MOSFETs
PRADIPTA DUTTA BINIT SYAMAL KALYAN KOLEY ARKA DUTTA C K SARKAR
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The paper presents a drain current model for double gate metal oxide semiconductor field effect transistors (DG MOSFETs) based on a new velocity saturation model that accounts for short-channel velocity saturation effect independently in the front and the back gate controlled channels under asymmetric front and back gate bias and oxide thickness. To determine the front and the back-channel velocity saturation, drain-induced barrierlowering is evaluated by effective gate voltages at the front and back gates obtained from surface potential at the threshold condition after considering symmetric and asymmetric front and back oxide thickness. The model alsoincorporates surface roughness scattering and ionized impurity scattering to estimate drain current for heavily/lightly doped channel for short-channel asymmetric DG MOSFET and a good agreement has been achieved with TCADsimulations, with a relative error of around 3–7%.
PRADIPTA DUTTA1 BINIT SYAMAL2 KALYAN KOLEY3 ARKA DUTTA3 C K SARKAR3
Volume 97, 2023
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