• Effect of temperature on $In_{x}Ga_{1−x}As/GaAs$ quantum dots

• # Fulltext

https://www.ias.ac.in/article/fulltext/pram/089/02/0025

• # Keywords

Quantum dot; strain tensor; band edge; nanoelectronics; temperature effect

• # Abstract

In this paper, the strain, band-edge, and energy levels of pyramidal $In_{x}Ga_{1−x}As/GaAs$ quantum dots are investigated by 1-band effective mass approach. It is shown that while temperature has no remarkable effect on the strain tensor, the band gap lowers and the radiation wavelength elongates by increasing temperature. Also, band gap and energy do not linearly decrease by temperature rise. Our results appear to agree with former researches. This can be used in designing laser devices and sensors when applied in different working temperatures. Furthermore, when the device works for a long time, self-heating occurs which changes the characteristics of the output.

• # Author Affiliations

1. Department of Physics, Payame Noor University (PNU), P.O. Box 19395-3697, Tehran, Iran
2. Laser and Optics Research Center, Imam Hossein University, Tehran, Iran
3. Department of Physics, Iran University of Science and Technology, Tehran, Iran
4. Department of Physics, University of Guilan, Namjoo Street, Rasht, Iran

• # Pramana – Journal of Physics

Volume 96, 2022
All articles
Continuous Article Publishing mode

• # Editorial Note on Continuous Article Publication

Posted on July 25, 2019