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    • Fulltext

       

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      Permanent link:
      https://www.ias.ac.in/article/fulltext/pram/089/02/0025

    • Keywords

       

      Quantum dot; strain tensor; band edge; nanoelectronics; temperature effect

    • Abstract

       

      In this paper, the strain, band-edge, and energy levels of pyramidal $In_{x}Ga_{1−x}As/GaAs$ quantum dots are investigated by 1-band effective mass approach. It is shown that while temperature has no remarkable effect on the strain tensor, the band gap lowers and the radiation wavelength elongates by increasing temperature. Also, band gap and energy do not linearly decrease by temperature rise. Our results appear to agree with former researches. This can be used in designing laser devices and sensors when applied in different working temperatures. Furthermore, when the device works for a long time, self-heating occurs which changes the characteristics of the output.

    • Author Affiliations

       

      MAHDI AHMADI BORJI1 ALI REYAHI2 3 ESFANDIAR RAJAEI4 MOHSEN GHAHREMANI2

      1. Department of Physics, Payame Noor University (PNU), P.O. Box 19395-3697, Tehran, Iran
      2. Laser and Optics Research Center, Imam Hossein University, Tehran, Iran
      3. Department of Physics, Iran University of Science and Technology, Tehran, Iran
      4. Department of Physics, University of Guilan, Namjoo Street, Rasht, Iran

    • Dates

       
      Published
      15 August 2017
      Manuscript received
      24 March 2016
      Manuscript revised
      31 January 2017
      Accepted
      22 February 2017
      Early published
      Unedited version published online
      Final version published online
      12 July 2017

  • Pramana – Journal of Physics | News

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      Posted on July 25, 2019

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