A large family of cosh-Gaussian travelling wave solution of a complex Ginzburg–Landau equation (CGLE), that describes dissipative semiconductor laser cavity is derived. Using perturbation method, the stability region is identified. Bifurcation analysis is done by smoothly varying the cavity loss coefficient to provide insight of the system dynamics. He’s variational method is adopted to obtain the standard sech-type and the notso-explored but promising cosh-Gaussian type, travelling wave solutions. For a given set of system parameters, only one sech solution is obtained, whereas several distinct solution points are derived for cosh-Gaussian case. These solutions yield a wide variety of travelling wave profiles, namely Gaussian, near-sech, flat-top and a cosh-Gaussian with variable central dip. A split-step Fourier method and pseudospectral method have been used for direct numerical solution of the CGLE and travelling wave profiles identical to the analytical profiles have been obtained. We also identified the parametric zone that promises an extremely large family of cosh-Gaussian travelling wave solutions with tunable shape. This suggests that the cosh-Gaussian profile is quite generic and would be helpful for further theoretical as well as experimental investigation on pattern formation, pulse dynamics and localization in semiconductor laser cavity.
Volume 94, 2020
Continuous Article Publishing mode
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