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https://www.ias.ac.in/article/fulltext/pram/086/04/0723-0736

AlGaN/GaN; HEMT; surface potential; channel potential; electric field.

In this paper, we have developed a physics-based model for surface potential, channel potential, electric field and drain current for AlGaN/GaN high electron mobility transistor with high-K gate dielectric using two-dimensional Poisson equation under full depletion approximation with the inclusion of effect of polarization charges. The accuracy of the model has been verified and is found to be in good agreement with the simulated results.

Das B¹ Goswami R¹ Bhowmick B¹

1. Electronics and Communication Engineering Department, National Institute of Technology, Silchar 788 010, India

Published

16 April 2016

Manuscript received

15 October 2014

Manuscript revised

19 February 2015

Accepted

11 March 2015

Early published

17 November 2015