• A physics-based potential and electric field model of a nanoscale rectangular high-K gate dielectric HEMT

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      Permanent link:
      https://www.ias.ac.in/article/fulltext/pram/086/04/0723-0736

    • Keywords

       

      AlGaN/GaN; HEMT; surface potential; channel potential; electric field.

    • Abstract

       

      In this paper, we have developed a physics-based model for surface potential, channel potential, electric field and drain current for AlGaN/GaN high electron mobility transistor with high-K gate dielectric using two-dimensional Poisson equation under full depletion approximation with the inclusion of effect of polarization charges. The accuracy of the model has been verified and is found to be in good agreement with the simulated results.

    • Author Affiliations

       

      Das B1 Goswami R1 Bhowmick B1

      1. Electronics and Communication Engineering Department, National Institute of Technology, Silchar 788 010, India
    • Dates

       
  • Pramana – Journal of Physics | News

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      Posted on July 25, 2019

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