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    • A physics-based potential and electric field model of a nanoscale rectangular high-K gate dielectric HEMT

      Das B Goswami R Bhowmick B

      Regular Volume 86 Issue 4 April 2016 pp 723-736

    • Fulltext

       

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      Permanent link:
      https://www.ias.ac.in/article/fulltext/pram/086/04/0723-0736

    • Keywords

       

      AlGaN/GaN; HEMT; surface potential; channel potential; electric field.

    • Abstract

       

      In this paper, we have developed a physics-based model for surface potential, channel potential, electric field and drain current for AlGaN/GaN high electron mobility transistor with high-K gate dielectric using two-dimensional Poisson equation under full depletion approximation with the inclusion of effect of polarization charges. The accuracy of the model has been verified and is found to be in good agreement with the simulated results.

    • Author Affiliations

       

      Das B1 Goswami R1 Bhowmick B1

      1. Electronics and Communication Engineering Department, National Institute of Technology, Silchar 788 010, India

    • Dates

       
      Published
      16 April 2016
      Manuscript received
      15 October 2014
      Manuscript revised
      19 February 2015
      Accepted
      11 March 2015
      Early published
      17 November 2015

  • Pramana – Journal of Physics | News

    • Editorial Note on Continuous Article Publication

      Posted on July 25, 2019

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