• Mismatch of dielectric constants at the interface of nanometer metal-oxide-semiconductor devices with high-𝐾 gate dielectric impacts on the inversion charge density

    • Fulltext


        Click here to view fulltext PDF

      Permanent link:

    • Keywords


      Dielectric film; metal-oxide-semiconductor field transistors; quantization.

    • Abstract


      The comparison of the inversion electron density between a nanometer metal-oxidesemiconductor (MOS) device with high-𝐾 gate dielectric and a SiO2 MOS device with the same equivalent oxide thickness has been discussed. A fully self-consistent solution of the coupled Schrödinger–Poisson equations demonstrates that a larger dielectric-constant mismatch between the gate dielectric and silicon substrate can reduce electron density in the channel of a MOS device under inversion bias. Such a reduction in inversion electron density of the channel will increase with increase in gate voltage. A reduction in the charge density implies a reduction in the inversion electron density in the channel of a MOS device. It also implies that a larger dielectric constant of the gate dielectric might result in a reduction in the source–drain current and the gate leakage current.

    • Author Affiliations


      Ling-Feng Mao1

      1. School of Urban Rail Transportation, 178 Gan-jiang East Road, Soochow University, Suzhou 215006, People’s Republic of China
    • Dates

  • Pramana – Journal of Physics | News

    • Editorial Note on Continuous Article Publication

      Posted on July 25, 2019

      Click here for Editorial Note on CAP Mode

© 2021-2022 Indian Academy of Sciences, Bengaluru.