• Variation of interface trap level charge density within the bandgap of 4H-SiC with varying oxide thickness

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      https://www.ias.ac.in/article/fulltext/pram/076/01/0165-0172

    • Keywords

       

      4H-SiC; wet thermal oxidation; MOSiC structure; interface trap level density.

    • Abstract

       

      Interfacial characteristics of metal oxide-silicon carbide (MOSiC) structure with different thickness of SiO2, thermally grown in steam ambient on Si-face of 4H-SiC (0 0 0 1) substrate were investigated. Variations in interface trapped level density ($D_{\text{it}}$) was systematically studied employing high-low (H-L) frequency $C–V$ method. It was found that the distribution of $D_{\text{it}}$ within the bandgap of 4H-SiC varied with oxide thickness. The calculated $D_{\text{it}}$ value near the midgap of 4H-SiC remained almost stable for all oxide thicknesses in the range of $10^9 –10^{10}$ cm-2 eV-1. The $D_{\text{it}}$ near the conduction band edge had been found to be of the order of 1011 cm-2 eV-1 for thicker oxides and for thinner oxides $D_{\text{it}}$ was found to be the range of 1010 cm-2 eV-1. The process had direct relevance in the fabrication of MOS-based device structures.

    • Author Affiliations

       

      Sanjeev K Gupta1 2 A Azam2 J Akhtar1

      1. Sensors and Nano-Technology Group, Semiconductor Devices Area, Central Electronics Engineering Research Institute (CEERI)/Council of Scientific and Industrial Research (CSIR), Pilani 333 031, India
      2. Center of Excellence in Material Sciences (Nanomaterials), Department of Applied Physics, Z.H. College of Engg. & Tech., Aligarh Muslim University, Aligarh 202 002, India
    • Dates

       
  • Pramana – Journal of Physics | News

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