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Crystal growth; transmission electron microscopy; X-ray diffractogram; energy dispersive analysis of X-rays; Hall effect; microstructure.

This paper reports the growth of germanium monosulphide (GeS) single crystals by vapour phase technique using different transporting agents. The single crystallinity and composition of the grown crystals have been verified by transmission electron microscopy (TEM) and energy dispersive analysis of X-rays (EDAX) respectively. Resistivity measurements have been carried out in different temperature ranges. Transport parameters, e.g. resistivity, Hall coefficient, carrier concentration and mobility have been measured at varying magnetic fields. All the experimental results have been explained.

G K Solanki¹ Dipika B Patel¹ Sandip Unadkat² M K Agarwal¹

1. Department of Physics, Sardar Patel University, Vallabh Vidyanagar 388 120, India
2. B.V.M. Engineering College, Vallabh Vidyanagar 388 120, India

Published

May 2010

Manuscript received

4 September 2009

Manuscript revised

3 January 2010

Accepted

29 January 2010