• Fulltext

       

        Click here to view fulltext PDF


      Permanent link:
      https://www.ias.ac.in/article/fulltext/pram/074/05/0813-0825

    • Keywords

       

      Crystal growth; transmission electron microscopy; X-ray diffractogram; energy dispersive analysis of X-rays; Hall effect; microstructure.

    • Abstract

       

      This paper reports the growth of germanium monosulphide (GeS) single crystals by vapour phase technique using different transporting agents. The single crystallinity and composition of the grown crystals have been verified by transmission electron microscopy (TEM) and energy dispersive analysis of X-rays (EDAX) respectively. Resistivity measurements have been carried out in different temperature ranges. Transport parameters, e.g. resistivity, Hall coefficient, carrier concentration and mobility have been measured at varying magnetic fields. All the experimental results have been explained.

    • Author Affiliations

       

      G K Solanki1 Dipika B Patel1 Sandip Unadkat2 M K Agarwal1

      1. Department of Physics, Sardar Patel University, Vallabh Vidyanagar 388 120, India
      2. B.V.M. Engineering College, Vallabh Vidyanagar 388 120, India
    • Dates

       
  • Pramana – Journal of Physics | News

    • Editorial Note on Continuous Article Publication

      Posted on July 25, 2019

      Click here for Editorial Note on CAP Mode

© 2017-2019 Indian Academy of Sciences, Bengaluru.