• Generation of ultrafast pulse via combined effects of stimulated Raman scattering and non-degenerate two-photon absorption in silicon nanophotonic chip

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      Permanent link:
      https://www.ias.ac.in/article/fulltext/pram/072/04/0727-0734

    • Keywords

       

      Integrated optics; silicon nanophotonic chip; ultrafast pulse; nonlinear process.

    • Abstract

       

      A project of ultrafast pulse generation has been presented and demonstrated by utilizing the combined nonlinear effects of stimulated Raman scattering (SRS) and non-degenerate two-photon absorption (TPA) based on silicon nanophotonic chip, in which a continuous wave (CW) and an ultrafast dark pulse are co-propagating in the silicon chip so that the CW will be modulated inversely by the dark pulse during the propagation. As a result, an ultrafast bright pulse is achieved using the technique. Simulation results show that an ultrafast pulse with a pulsewidth (full-width at half-maximum (FWHM)) of about 50 fs is generated at the end of a 5-mm long silicon chip, when the initial conditions, including an input maximum of 0.5 W and FWHM of ∼ 176 fs for dark pulse, and CW with power of 5 W, are chosen.

    • Author Affiliations

       

      Jianwei Wu1 Fengguang Luo2 3 Mingcui Cao2 3

      1. College of Mathematics and Physics, Hohai University, Nanjing 210098, People's Republic of China
      2. College of Optoelectronics Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
      3. Wuhan National Laboratory for Optoelectronics, Wuhan 430074, People’s Republic of China
    • Dates

       
  • Pramana – Journal of Physics | News

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