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https://www.ias.ac.in/article/fulltext/pram/072/04/0727-0734

Integrated optics; silicon nanophotonic chip; ultrafast pulse; nonlinear process.

A project of ultrafast pulse generation has been presented and demonstrated by utilizing the combined nonlinear effects of stimulated Raman scattering (SRS) and non-degenerate two-photon absorption (TPA) based on silicon nanophotonic chip, in which a continuous wave (CW) and an ultrafast dark pulse are co-propagating in the silicon chip so that the CW will be modulated inversely by the dark pulse during the propagation. As a result, an ultrafast bright pulse is achieved using the technique. Simulation results show that an ultrafast pulse with a pulsewidth (full-width at half-maximum (FWHM)) of about 50 fs is generated at the end of a 5-mm long silicon chip, when the initial conditions, including an input maximum of 0.5 W and FWHM of $\sim 176$ fs for dark pulse, and CW with power of 5 W, are chosen.

Jianwei Wu¹ Fengguang Luo^{2 3} Mingcui Cao^{2 3}

1. College of Mathematics and Physics, Hohai University, Nanjing 210098, People's Republic of China
2. College of Optoelectronics Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
3. Wuhan National Laboratory for Optoelectronics, Wuhan 430074, People’s Republic of China

Published

April 2009

Manuscript received

24 May 2008

Manuscript revised

8 November 0208

Accepted

25 November 2008