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Channel length scaling and the impact of metal gate work function on the performance of double gate-metal oxide semiconductor field-effect transistors
D Rechem S Latreche C Gontrand
Research Articles Volume 72 Issue 3 March 2009 pp 587-599
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Fulltext
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Permanent link:
https://www.ias.ac.in/article/fulltext/pram/072/03/0587-0599 -
Keywords
Nanotransistor ;metal oxide semiconductor field-effect transistors ;silicon-on-insulator ;work function ;quantum effects ;self-consistent. -
Abstract
In this paper, we study the effects of short channel on double gate MOSFETs. We evaluate the variation of the threshold voltage, the subthreshold slope, the leakage current and the drain-induced barrier lowering when channel length $L_{\text{CH}}$ decreases. Further- more, quantum effects on the performance of DG-MOSFETs are addressed and discussed. We also study the influence of metal gate work function on the performance of nanoscale MOSFETs. We use a self-consistent Poisson–Schrödinger solver in two dimensions over the entire device. A good agreement with numerical simulation results is obtained.
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Author Affiliations
D Rechem1 S Latreche1 C Gontrand2
- Laboratoire Hyperfréquence et Semi-conducteur (L.H.S), Département d’Electronique, Faculté des Sciences de l'ingénieur, Université Mentouri de Constantine, 25000, Algérie
- INL, bât. Blaise Pascal INSA 20, av. Jean Capelle 69621, Villeurbanne Cedex, France
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Dates
- Published
- March 2009
- Manuscript received
- 10 January 2008
- Manuscript revised
- 28 October 2008
- Accepted
- 11 November 2008
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Pramana – Journal of Physics
Volume 97, 2023
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