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    • Transport and stability studies on high band gap a-Si:H films prepared by argon dilution

      Purabi Gogoi P N Dixit Pratima Agarwal

      Contributed papers Volume 70 Issue 2 February 2008 pp 351-358

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      https://www.ias.ac.in/article/fulltext/pram/070/02/0351-0358

    • Keywords

       

      Amorphous silicon; argon dilution; stability; deposition rate; Staebler Wronski effect.

    • Abstract

       

      Device quality hydrogenated amorphous silicon films (a-Si:H) are deposited at a high deposition rate (4-5 Å/s) using a mixture of argon and hydrogen-diluted silane. The films exhibit good opto-electronic properties and show less degradation upon light soaking. Light-induced changes in conductivity could be annealed at much lower temperature. The presence of Ar* and atomic hydrogen in plasma replaces the weak Si-Si bonds, which are responsible for light-induced degradation by strong Si-Si bonds. This results in the improved stability of the films.

    • Author Affiliations

       

      Purabi Gogoi1 P N Dixit2 Pratima Agarwal1

      1. Department of Physics, Indian Institute of Technology Guwahati, Guwahati 781 039, India
      2. Plasma Processed Materials Division, National Physical Laboratory, New Delhi 110 012, India

    • Dates

       
      Published
      February 2008

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