• A variable electron beam and its irradiation effect on optical and electrical properties of CdS thin films

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    • Keywords


      Electron irradiation; semiconductor; optical energy band gap and absorption characteristics; thermo-electric power and conductivity

    • Abstract


      A low energy electron accelerator has been constructed and tested. The electron beam can operate in low energy mode (100 eV to 10 keV) having a beam diameter of 8–10 mm. Thin films of CdS having thickness of 100 nm deposited on ITO-coated glass substrate by thermal evaporation method have been irradiated by electron beam in the above instrument. The $I–V$ characteristic is found to be nonlinear before electron irradiation and linear after electron irradiation. The TEP measurement confirms the n-type nature of the material. The TEP and $I–V$ measurements also confirm the modification of ITO/CdS interface with electron irradiation.

    • Author Affiliations


      M Singh1 Y K Vijay1 B K Sharma1

      1. Department of Physics, University of Rajasthan, Jaipur 302 004, India
    • Dates

  • Pramana – Journal of Physics | News

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      Posted on July 25, 2019

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