• A variable electron beam and its irradiation effect on optical and electrical properties of CdS thin ﬁlms

• Fulltext

https://www.ias.ac.in/article/fulltext/pram/069/04/0631-0638

• Keywords

Electron irradiation; semiconductor; optical energy band gap and absorption characteristics; thermo-electric power and conductivity

• Abstract

A low energy electron accelerator has been constructed and tested. The electron beam can operate in low energy mode (100 eV to 10 keV) having a beam diameter of 8–10 mm. Thin ﬁlms of CdS having thickness of 100 nm deposited on ITO-coated glass substrate by thermal evaporation method have been irradiated by electron beam in the above instrument. The $I–V$ characteristic is found to be nonlinear before electron irradiation and linear after electron irradiation. The TEP measurement conﬁrms the n-type nature of the material. The TEP and $I–V$ measurements also conﬁrm the modiﬁcation of ITO/CdS interface with electron irradiation.

• Author Affiliations

1. Department of Physics, University of Rajasthan, Jaipur 302 004, India

• Pramana – Journal of Physics

Volume 96, 2022
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• Editorial Note on Continuous Article Publication

Posted on July 25, 2019