Photoacoustic spectroscopy (PAS) is one of the important branches of spectroscopy, which enables one to detect light-induced heat production following the absorption of pulsed radiation by the sample. As2S3, As2Se3 and GeSe2 exhibit a wide variety of photo-induced phenomena that enable them to be used as optical imaging or storage medium and various electronic devices, including electro-optic information storage devices and optical mass memories. Therefore, accurate measurement of thermal properties of semiconducting ﬁlms is necessary to study the memory density. The thermal conductivity of thin ﬁlms of As2S3 (thickness 100 𝜇m and 80 𝜇m), As2Se3 (thickness 100 𝜇m and 80 𝜇m) and GeSe2 (thickness 120 𝜇m and 100 𝜇m) has been measured using PAS technique. Our result shows that the thermal conductivity of thicker ﬁlms is larger than the thinner ﬁlms. This can be explained by the thermal resistance effect between the ﬁlm and the surface of the substrate.