• Frequency dependence of junction capacitance of BPW34 and BPW41 p-i-n photodiodes

    • Fulltext

       

        Click here to view fulltext PDF


      Permanent link:
      https://www.ias.ac.in/article/fulltext/pram/068/04/0701-0706

    • Keywords

       

      BPW34; BPW41; p-i-n; capacitance; frequency dependence.

    • Abstract

       

      This article investigates the frequency dependence of small-signal capacitance of silicon BPW34 and BPW41 (Vishay) p-i-n photodiodes. We show that the capacitance-frequency characteristics of these photodiodes are well-described by the Schibli and Milnes model. The activation energy and the concentration of the dominant trap levels detected in BPW34 and BPW41 are 280{330 meV and $1.1 \times 10^{12} - 1.2 \times 10^{12}$ cm-3, respectively. According to the high-frequency $C-V$ measurements, the impurity concentrations are determined to be about $5.3 \times 10^{12}$ and $1.9 \times 10^{13}$ cm-3 in BPW41 and BPW34, respectively using the method of $\Delta V/ \Delta (C^{-2})$ vs. 𝐶.

    • Author Affiliations

       

      Habibe Bayhan1 Şadan Özden1

      1. Physics Department, Faculty of Art and Science, University of Muğla, 48000 Muğla, Turkey
    • Dates

       
  • Pramana – Journal of Physics | News

    • Editorial Note on Continuous Article Publication

      Posted on July 25, 2019

      Click here for Editorial Note on CAP Mode

© 2017-2019 Indian Academy of Sciences, Bengaluru.