• Laser-induced down-conversion parameters of singly and doubly doped ZnS phosphors

    • Fulltext

       

        Click here to view fulltext PDF


      Permanent link:
      https://www.ias.ac.in/article/fulltext/pram/065/03/0541-0546

    • Keywords

       

      UV laser excitation; quencher impurities; excited state lifetimes; laserinduced photoluminescence

    • Abstract

       

      Singly and doubly doped ZnS phosphors have been synthesized using flux method. Laser-induced photoluminescence has been observed in ZnS-doped phosphors when these were excited by the pulsed UV N2 laser radiation. Due to down-conversion phenomenon, fast phosphorescence emission in the visible region is recorded in milliseconds time domain for ZnS:Mn while in the case of ZnS:Mn:killer (Fe, Co and Ni) the lifetime reduces to microseconds time domain. Experimentally observed luminescent emission parameters of excited states such as, lifetimes, trap-depth values and decay constants have been reported here at room temperature. The high efficiency and fast recombination times observed in doped ZnS phosphors make these materials very attractive for optoelectronic applications.

    • Author Affiliations

       

      H S Bhatti1 Rajesh Sharma2 N K Verma3

      1. Department of Physics, Punjabi University, Patiala - 147 002, India
      2. Institute of Engineering and Emerging Technologies, Baddi, Dist, Solan - 173 205, India
      3. SPMS, Thapar Institute of Engineering and Technology, Patiala - 147 004, India
    • Dates

       
  • Pramana – Journal of Physics | News

    • Editorial Note on Continuous Article Publication

      Posted on July 25, 2019

      Click here for Editorial Note on CAP Mode

© 2017-2019 Indian Academy of Sciences, Bengaluru.