Energy levels in rectangular quantum well wires based on a modified profile of the heterojunction
The effect of a spatially dependent effective mass on the energy levels in a rectangular quantum wire with finite barrier potential is considered. The heterojunction is modelled by an error function rather than a step function to more accurately model the material transition region at the interface between the two materials. The carrier ground state is calculated using the envelope function approximation for Ga0.47In0.53As/InP and GaAs/Ga0.63Al0.37As systems. The results are lower than those reported before, and are in better agreement with the experimental points.
Volume 96, 2022
Continuous Article Publishing mode
Click here for Editorial Note on CAP Mode