• Temperature dependence of the fundamental band gap parameters in cadmium-rich ZnxCd1-xSe using photoluminescence spectroscopy

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    • Keywords


      Photoluminescence; semiconductors; band gap

    • Abstract


      Thin films of ternary ZnxCd1-xSe were deposited on GaAs (100) substrate using metalorganic-chemical-vapour-deposition (MOCVD) technique. Temperature dependence of the nearband-edge emission from these Cd-rich ZnxCd1-xSe (forx = 0025, 0.045) films has been studied using photoluminescence spectroscopy. Relevant parameters that describe temperature variation of the energy and broadening of the fundamental band gap have been evaluated using various models including the two-oscillator model, the Bose-Einstein model and the Varshni model. While all these models suffice to explain spectra at higher temperatures, the two-oscillator model not only explains low temperature spectra adequately but also provides additional information concerning phonon dispersion in these materials.

    • Author Affiliations


      Lalita Gupta1 S Rath1 S C Abbi1 F C Jain1 2

      1. Department of Physics, Indian Institute of Technology, New Delhi - 110 016, India
      2. Department of Electrical Engineering, University of Connecticut, Connecticut, USA
    • Dates

  • Pramana – Journal of Physics | News

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      Posted on July 25, 2019

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