• Comparison of resonant tunneling in AlGaAs/GaAs parabolic and diffusion modified quantum wells

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    • Keywords


      Parabolic and diffused resonant tunneling diodes; transmission coefficient; current-voltage characteristics; dark current

    • Abstract


      Double barrier resonant tunneling diode using annealing induced diffusion modified quantum well is proposed as a viable alternative to that using parabolic quantum well which requires complex techniques to fabricate it. The transmission coefficients are calculated using the hybrid incremental airy function plane wave approach. The room temperature current-voltage characteristics have been calculated using transmission coefficients. The current-voltage characteristics are found to be similar in both diodes.

    • Author Affiliations


      Sudhira Panda1 B K Panda1 S Fung1 2

      1. Institute of Physics, Sachivalaya Marg, Bhubaneswar - 751 005, India
      2. Department of Physics, University of Hong Kong, Hong Kong, People’s Republic of China
    • Dates

  • Pramana – Journal of Physics | News

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      Posted on July 25, 2019

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