Double barrier resonant tunneling diode using annealing induced diffusion modified quantum well is proposed as a viable alternative to that using parabolic quantum well which requires complex techniques to fabricate it. The transmission coefficients are calculated using the hybrid incremental airy function plane wave approach. The room temperature current-voltage characteristics have been calculated using transmission coefficients. The current-voltage characteristics are found to be similar in both diodes.
Volume 94, 2020
Continuous Article Publishing mode
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