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      https://www.ias.ac.in/article/fulltext/pram/054/05/0777-0784

    • Keywords

       

      2 MeV electron; 140 MeV28Si; PADC; dose-dependent track registration properties; bulk etch-rate; etching response; critical angle of etching; detection efficiency; scanning electron microscopy

    • Abstract

       

      In the present work, attempts have been made to investigate the modification in particle track etching response of polyallyl diglycol carbonate (PADC) due to impact of 2 MeV electrons. PADC samples pre-irradiated to 1, 10, 20, 40, 60, 80 and 100 Mrad doses of 2 MeV electrons were further exposed to 140 MeV28 Si beam and dose-dependent track registration properties of PADC have been studied. Etch-rate values of the PADC irradiated to 100 Mrad dose electron was found to increase by nearly 4 times that of pristine PADC. The electron irradiation has promoted chain scissioning in PADC, thereby converting the polymer into an easily etchable polymer. Moreover, the etching response and the detection efficiency were found to improve by electron irradiation. Scanning electron microscopy of etched samples further revealed the surface damage in these irradiated PADCs.

    • Author Affiliations

       

      R Mishra1 S P Tripathy1 A Kul Shrestha1 A Srivastava1 S Ghosh1 K K Dwivedi1 2 D T Khathing1 3 M Müller1 4 D Fink1 4

      1. Department of Chemistry, North-Eastern Hill University, Shillong - 793 003, India
      2. Arunachal University, Rono Hills, Itanagar - 791 111, India
      3. Department of Physics, North-Eastern Hill University, Shillong - 793 003, India
      4. Hahn-Meitner Institute, Glienicker Strasse 100, Berlin - D-14109, Germany
    • Dates

       
  • Pramana – Journal of Physics | News

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