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      Permanent link:
      https://www.ias.ac.in/article/fulltext/pram/049/05/0547-0553

    • Keywords

       

      Semiconductor; phonons; lattice dynamics; neutron scattering

    • Abstract

       

      The phonon dispersion curves for aluminium arsenide and antimonide have been investigated by using a deformation bond approximation model. The results obtained from this model are compared with the experimental values wherever it is available. Since there is no complete experimental phonon dispersion curves for AlAs, we could not compare our calculated results, but the results of AlSb have been compared with the inelastic neutron scattering measurements at 15 K. However, we compare the phonon frequencies of AlAs and AlSb at critical points of the Brillouin zone obtained by our calculations and Raman spectroscopy measurements. This model predicts the phonon modes satisfactorily in all the symmetry directions of the Brillouin zone (BZ). The spectrum has similar features as observed in other III–V compound semiconductors.

    • Author Affiliations

       

      Prafulla K Jha1 2 Sujata Rath1 Sankar P Sanyal1

      1. Department of Physics, University of Bhopal, C. V. Raman Building, Bhopal - 462 026, India
      2. Institut Jaume Almera, Consell Supiror d’Invastigacions Cientifiques (CSIC), Barcelona - 08028, Spain
    • Dates

       
  • Pramana – Journal of Physics | News

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