• Thermal quenching of luminescence in erbium doped semiconductors

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    • Keywords


      Luminescence; rare earths; semiconductors

    • Abstract


      The nature of the temperature dependence of luminescence intensity from Er+ ions in GaInAsP, Si, InP, GaAs, AlGaAs, ZnTe, as observed by Favennecet al [1] has been examined in terms of a double exponential model. The smaller activation energy is found to be 58–100 meV, characteristic of a localized energy barrier at the Er+ centre while the higher activation energy is approximately 0.8Eg attributed to an Auger non-radiative process of carrier excitation into bands. This model has been found to describe the observed temperature dependences with reasonably good agreement.

    • Author Affiliations


      B Chanda1 D N Bose1

      1. Semiconductor Division, Materials Science Centre, Indian Institute of Technology, Kharagpur - 721 302, India
    • Dates

  • Pramana – Journal of Physics | News

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      Posted on July 25, 2019

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