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    • Keywords


      Electron paramagnetic resonance; bismuth silicon oxide; photorefraction; laser

    • Abstract


      Photo-induced charge transfer and its kinetics were investigated in Bi12SiO20 in 10–300 K temperature range, using EPR of Fe3+ centre, underin situ illumination with copper vapour laser (CVL). The decay kinetics was found to follow double exponential behaviour. Relaxation of the photo-induced electron transfer to the preillumination condition occurred even at 10 K. Shallow traps were, therefore, associated with the electron trapping, leading to a better understanding of the fast photorefractive response of BSO.

    • Author Affiliations


      N K Porwal1 R M Kadam1 Y Babu1 M D Sastry1 M D Aggarwal1 2 Putcha Venkateswarlu1 2

      1. Radiochemistry Division, Bhabha Atomic Research Centre, Trombay, Mumbai - 400 085, India
      2. Department of Physics, Alabama A&M University, Normal, Alabama - 35762, USA
    • Dates

  • Pramana – Journal of Physics | News

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      Posted on July 25, 2019

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