• Fulltext

       

        Click here to view fulltext PDF


      Permanent link:
      https://www.ias.ac.in/article/fulltext/pram/048/04/0929-0935

    • Keywords

       

      Electron paramagnetic resonance; bismuth silicon oxide; photorefraction; laser

    • Abstract

       

      Photo-induced charge transfer and its kinetics were investigated in Bi12SiO20 in 10–300 K temperature range, using EPR of Fe3+ centre, underin situ illumination with copper vapour laser (CVL). The decay kinetics was found to follow double exponential behaviour. Relaxation of the photo-induced electron transfer to the preillumination condition occurred even at 10 K. Shallow traps were, therefore, associated with the electron trapping, leading to a better understanding of the fast photorefractive response of BSO.

    • Author Affiliations

       

      N K Porwal1 R M Kadam1 Y Babu1 M D Sastry1 M D Aggarwal1 2 Putcha Venkateswarlu1 2

      1. Radiochemistry Division, Bhabha Atomic Research Centre, Trombay, Mumbai - 400 085, India
      2. Department of Physics, Alabama A&M University, Normal, Alabama - 35762, USA
    • Dates

       
  • Pramana – Journal of Physics | News

    • Editorial Note on Continuous Article Publication

      Posted on July 25, 2019

      Click here for Editorial Note on CAP Mode

© 2021-2022 Indian Academy of Sciences, Bengaluru.