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Electron paramagnetic resonance studies of photorefractive crystals II: Fe3+ doped Bi12SiO20 with copper vapour laser illumination in 10–100 K range
N K Porwal R M Kadam Y Babu M D Sastry M D Aggarwal Putcha Venkateswarlu
Volume 48 Issue 4 April 1997 pp 929-935
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Keywords
Electron paramagnetic resonance ;bismuth silicon oxide ;photorefraction ;laser -
Abstract
Photo-induced charge transfer and its kinetics were investigated in Bi12SiO20 in 10–300 K temperature range, using EPR of Fe3+ centre, underin situ illumination with copper vapour laser (CVL). The decay kinetics was found to follow double exponential behaviour. Relaxation of the photo-induced electron transfer to the preillumination condition occurred even at 10 K. Shallow traps were, therefore, associated with the electron trapping, leading to a better understanding of the fast photorefractive response of BSO.
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Author Affiliations
N K Porwal1 R M Kadam1 Y Babu1 M D Sastry1 M D Aggarwal1 2 Putcha Venkateswarlu1 2
- Radiochemistry Division, Bhabha Atomic Research Centre, Trombay, Mumbai - 400 085, India
- Department of Physics, Alabama A&M University, Normal, Alabama - 35762, USA
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Dates
- Published
- April 1997
- Manuscript received
- 14 June 1996
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Pramana – Journal of Physics
Volume 97, 2023
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