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      https://www.ias.ac.in/article/fulltext/pram/044/01/0019-0032

    • Keywords

       

      Cavity perturbation technique; silicon; microwave conductivity; momentum relaxation time

    • Abstract

       

      The cavity perturbation technique is employed for the characterisation of semiconductors at microwave frequency for its conductivity. Temperature variation of microwave conductivity studies provide the information regarding the band gap, scattering parameter and impurity ionization energy. Change in the real part of the dielectric permittivity with conductivity indicates the change in the momentum relaxation time.

    • Author Affiliations

       

      V Subramanian1 V R K Murthy1 J Sobhanadri1

      1. Department of Physics, Indian Institute of Technology, Madras - 600036, India
    • Dates

       
  • Pramana – Journal of Physics | News

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      Posted on July 25, 2019

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