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      https://www.ias.ac.in/article/fulltext/pram/042/05/0421-0425

    • Keywords

       

      SmSe1−xAsx; lattice parameter; electrical resistivity; semiconductor to metal transition; high pressure

    • Abstract

       

      Results are presented on the measurements of unit cell parameter and electrical resistivity under pressure on SmSe1−xAsx forx=0.1, 0.2, 0.3 and 0.4. The electrical resistivity values are found to be decreasing with increase of pressure and also with increase of arsenic concentration. The semiconductor to metallic transition is induced by chemical alloying of SmSe with SmAs similar to that observed under pressure. The electrical resistivity values are also calculated which are in good agreement with the experimental values. In this calculation, the carrier mobility is of negative sign and so the sample SmSe1−xAsx is found to ben-type semiconductor.

    • Author Affiliations

       

      S Ariponnammal1 S Natarajan1

      1. Department of Physics, Anna University, Madras - 600 025, India
    • Dates

       
  • Pramana – Journal of Physics | News

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