Electrical and photo-electrical properties of a chalcopyrite semiconductor AgInSe2
In this paper we report the electrical and photoelectrical properties of AgInSe2. Nyquist plots for AgInSe2, obtained at different temperatures, are perfect arcs of a semicircle with their centres lying below the abscissa at an angleα. Finite values ofα (the distribution parameter) clearly indicate a multirelaxation behaviour. Transient and steady state photoconductivity of AgInSe2 has been studied at different temperatures and illumination levels. The lnIph vs lnF curves at different temperatures follow the empirical relation:Iph ∝Fγ. Values of γ are close to 0.5 at all the temperatures, suggesting a bimolecular recombination. Decay of the photocurrent, when the illumination is switched off, shows that during decay, photocurrent has two components, i.e. a fast decay in the beginning and a slow decay thereafter. Decay time constant for slow decay process decreases with increasing temperature, suggesting that recombination is a thermally activated process in the temperature range studied.
Volume 93 | Issue 6
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