• Electrical switching and memory phenomena ino-tolidine DDQ under pressure

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      https://www.ias.ac.in/article/fulltext/pram/037/02/0147-0151

    • Keywords

       

      High pressure; non-ohmic conduction; electrical switching

    • Abstract

       

      Electrical switching has been observed ino-tolidine-DDQ at pressures of 7.66 GPa and fields ∼3×105V/m withσON/σOFF≈103 at a temperature of 300 K. The switching is found to be of the memory type and the sample can be driven back to the low conducting state by applying ac pulses of sufficient magnitude but independent of frequency.

    • Author Affiliations

       

      T Ravindran1 S V Subramanyam1

      1. Department of Physics, Indian Institute of Science, Bangalore - 560 012, India
    • Dates

       
  • Pramana – Journal of Physics | News

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      Posted on July 25, 2019

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