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      https://www.ias.ac.in/article/fulltext/pram/035/06/0519-0525

    • Keywords

       

      Electronic spectrum; SiTe radical

    • Abstract

       

      In the electronic spectrum of silicon monotelluride which has been produced in microwave discharges through sealed tubes, a large number of new bands belonging to theA1Π-X1Σ+ system (3100–3900 Å) and theE1Σ+-X1Σ+ system (2800–3100 Å) of Si130Te has been observed. The vibrational structure analyses of these band systems have resulted in the determination of improved vibrational constants in all the three electronic states involved in these transitions. An error in the previous determination of the vibrational constants of theE1Σ+ state has been corrected. An upper limit for the dissociation energy of the silicon monotelluride has been determined to be 40,000 cm−1.

    • Author Affiliations

       

      G Lakshminarayana1 Sheila Gopal1

      1. Spectroscopy Division, Bhabha Atomic Research Centre, Trombay, Bombay - 400 085, India
    • Dates

       
  • Pramana – Journal of Physics | News

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