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Electronic spectrum; SiTe radical

In the electronic spectrum of silicon monotelluride which has been produced in microwave discharges through sealed tubes, a large number of new bands belonging to theA¹Π-X¹Σ⁺ system (3100–3900 Å) and theE¹Σ⁺-X¹Σ⁺ system (2800–3100 Å) of Si¹³⁰Te has been observed. The vibrational structure analyses of these band systems have resulted in the determination of improved vibrational constants in all the three electronic states involved in these transitions. An error in the previous determination of the vibrational constants of theE¹Σ⁺ state has been corrected. An upper limit for the dissociation energy of the silicon monotelluride has been determined to be 40,000 cm⁻¹.

G Lakshminarayana¹ Sheila Gopal¹

1. Spectroscopy Division, Bhabha Atomic Research Centre, Trombay, Bombay - 400 085, India

Published

December 1990

Manuscript received

26 April 1990

Manuscript revised

11 August 1990