• Effect of annealing on the opto-electronic properties of Cu0.9In1.0Se2.0 films

    • Fulltext


        Click here to view fulltext PDF

      Permanent link:

    • Keywords


      Annealing effect; CuInSe2

    • Abstract


      The influence of annealing on the structure and opto-electronic properties of Cu0.9In1.0Se2.0 films prepared by solution growth technique has been studied. The films annealed at 500–520°C in air, vacuum (10−4 torr), In-vapour and Se-vapour show polycrystalline chalcopyrite structure with orientation perpendicular to the (220) plane. Films annealed in Se-vapour at 500°C for 30 min have maximum grain size (560 Å), minimum optical energy gap, maximum absorption coefficient, lowest resistivity, maximum photosensitivity and thus are suitable for photovoltaic applications. Annealing in In-vapour or in vacuum changesp-type CuInSe2 inton-type which possibly arises due to the increase in Se vacancies.

    • Author Affiliations


      R P Sharma1 Pankaj Garg1 J C Garg1

      1. Department of Physics, University of Rajasthan, Jaipur - 302004, India
    • Dates

  • Pramana – Journal of Physics | News

    • Editorial Note on Continuous Article Publication

      Posted on July 25, 2019

      Click here for Editorial Note on CAP Mode

© 2021-2022 Indian Academy of Sciences, Bengaluru.