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      https://www.ias.ac.in/article/fulltext/pram/032/05/0641-0646

    • Keywords

       

      GaAs; native oxide; Raman scattering

    • Abstract

       

      Laser Raman spectroscopy was employed as a non-destructive probe for the detection and monitoring of crystalline arsenic in the native oxide films formed during heating of GaAs in air at various temperatures. Spectroscopy of oxide films formed after successive heating and etching treatments could confirm the location of arsenic to be near the top of the GaAs: native oxide overlayer.

    • Author Affiliations

       

      Mukesh Jain1 Guru Datta1 P Venkataraman1 S C Abbi1 K P Jain1 2

      1. Laser Technology Research Programme, Indian Institute of Technology, New Delhi - 110 016, India
      2. Department of Theoretical Physics, University of Oxford, 1 Keble Road, Oxford - OX1 3NP, England
    • Dates

       
  • Pramana – Journal of Physics | News

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      Posted on July 25, 2019

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