• Fulltext

       

        Click here to view fulltext PDF


      Permanent link:
      https://www.ias.ac.in/article/fulltext/pram/031/05/0383-0387

    • Keywords

       

      Hydrostatic deformation potentials; bandgap; pressure dependence

    • Abstract

       

      The pressure dependence of the direct and indirect bandgap of epitaxial In0.52Al0.48As on InP(001) substrate has been measured using photoluminescence up to 92 kbar hydrostatic pressure. The bandgap changes from Γ toX at an applied pressure of ∼ 43 kbar. Hydrostatic deformation potentials for both the Γ andX bandgaps are deduced, after correcting for the elastic constant (bulk modulus) mismatch between the epilayer and the substrate. For the epilayer we obtain$$(\Xi _d + \tfrac{1}{3}\Xi _u - a) as - (6 \cdot 92 + 0 \cdot 3) eV$$ and+(2.81±0.15)eV for the Γ andX bandgaps respectively. From the pressure dependence of the normalized Γ-bandgap photoluminescence intensity a Γ-X lifetime ratio, (τΓX), of 4.1×10−3 is deduced.

    • Author Affiliations

       

      R People1 A Jayaraman1 K W Wecht1 S K Alexander1 A Y Cho1 D L Sivco1

      1. AT & T Bell Laboratories, Murray Hill, New Jersey - 07974, USA
    • Dates

       
  • Pramana – Journal of Physics | News

    • Editorial Note on Continuous Article Publication

      Posted on July 25, 2019

      Click here for Editorial Note on CAP Mode

© 2017-2019 Indian Academy of Sciences, Bengaluru.