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Silicon surface-barrier; surface barrier detector; fabrication techniques

Fabrication methods for silicon surface barrier detectors and their correlated properties which result in the production of high resolution (< 20 keV) devices have been studied. The techniques for fabrication and testing of the detectors currently employed at our Centre are presented. An FWHM of 14keV for 5·486 MeV²⁴¹Am α has been achieved. Our results are therefore comparable with the best in the world.

R P Sharma¹

1. Variable Energy Cyclotron Centre, B.A.R.C., 1/AF Bidhan Nagar, Calcutta - 700 064, India

Published

September 1988

Manuscript received

23 March 1988