• Ga0.47 In0.53 As—The material for high-speed devices

    • Fulltext

       

        Click here to view fulltext PDF


      Permanent link:
      https://www.ias.ac.in/article/fulltext/pram/023/03/0411-0421

    • Keywords

       

      Ternary alloy semiconductor; electron mobility; fet ; photodetector

    • Abstract

       

      Electron transport properties of Ga0.47In0.53As are reviewed. The available physical constants of the material and results on electron mobility in bulk materials, 2deg systems and under hot-electron conditions are presented. Applications of the material in the construction offet’s and photo-conductive detectors are briefly discussed.

    • Author Affiliations

       

      Biswa Ranjan Nag1

      1. Institute of Radio Physics and Electronics, 92, Acharya Prafulla Chandra Road, Calcutta - 700 009, India
    • Dates

       
  • Pramana – Journal of Physics | News

    • Editorial Note on Continuous Article Publication

      Posted on July 25, 2019

      Click here for Editorial Note on CAP Mode

© 2017-2019 Indian Academy of Sciences, Bengaluru.