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      Permanent link:
      https://www.ias.ac.in/article/fulltext/pram/023/03/0405-0410

    • Keywords

       

      lo-to phonons; indium arsenide; pressure dependence; Raman scattering; diamond anvil cell; Grüneisen parameters

    • Abstract

       

      The pressure dependence of thelo-to phonons in InAs has been investigated by Raman scattering using the diamond anvil cell. Indium arsenide transforms, presumably to the rock-salt structure at 70±1 kbar. The mode Grüneisen parameters for thelo-to phonons are γlo=0.99±0.03, γto=1.2±0.03 respectively. The effective charge,e*T, for InAs decreases slightly with pressure and this trend is in accordance with the behaviour of other III–V zinc blende structured semiconductors: The structural phase transition is discussed in the light of theoretical calculations for phase stability of III–V compounds, as well as recent high pressure x-ray diffraction studies.

    • Author Affiliations

       

      A Jayaraman1 V Swaminathan1 B Batlogg1

      1. AT and T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ - 07974, USA
    • Dates

       
  • Pramana – Journal of Physics | News

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