The Hall mobility, electron concentration and resistivity have been measured as a function of alloy composition for Ga1−xAlxAs alloys at 300 K. The data have been explained on the multiconduction band structure of the alloys. The alloy composition for the direct-indirect conduction band minima cross-over, the electron mobility in theX minima and the activation energy of the deep level below these minima have been determined.
Volume 96, 2022
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