• Significance of Hall measurements in Ga1−xAlxAs alloys at 300 K

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    • Keywords


      Ga1−xAlxAs; Hall measurement; cross-over composition; mobility; deep levels

    • Abstract


      The Hall mobility, electron concentration and resistivity have been measured as a function of alloy composition for Ga1−xAlxAs alloys at 300 K. The data have been explained on the multiconduction band structure of the alloys. The alloy composition for the direct-indirect conduction band minima cross-over, the electron mobility in theX minima and the activation energy of the deep level below these minima have been determined.

    • Author Affiliations


      Ashok K Saxena1 B B Singh1

      1. Department of Electronics and Communication Engineering, University of Roorkee, Roorkee - 247 667, India
    • Dates

  • Pramana – Journal of Physics | News

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