• Frequency dependence of the surface states at the N-type Si-SiO2 interface

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    • Keywords


      Metal-oxide semiconductor structure; n-type Si-SiO2 interface; interface state response; frequency dependence

    • Abstract


      The response of the surface states at then-type Si-SiO2 interface to the different a.c. signal frequencies has been studied. The response values have been computed from both the measured capacitance voltage (C-V) and conductance-voltage (G-V) techniques. The results presented show that the frequency response of the effective density of states to different a.c. signal frequencies is proportional to the log of the applied frequencies.

    • Author Affiliations


      R J Singh1 R S Srivastava1

      1. Department of Physics, Banaras Hindu University, Varanasi - 221 005, India
    • Dates

  • Pramana – Journal of Physics | News

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      Posted on July 25, 2019

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