The response of the surface states at then-type Si-SiO2 interface to the different a.c. signal frequencies has been studied. The response values have been computed from both the measured capacitance voltage (C-V) and conductance-voltage (G-V) techniques. The results presented show that the frequency response of the effective density of states to different a.c. signal frequencies is proportional to the log of the applied frequencies.
Volume 95, 2021
Continuous Article Publishing mode
Click here for Editorial Note on CAP Mode