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Resistance changes in thin metallic films under ion bombardment
S B Ogale S V Ghaisas A S Ogale V N Bhoraskar M R Bhiday
Solid State Physics Volume 15 Issue 1 July 1980 pp 75-83
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https://www.ias.ac.in/article/fulltext/pram/015/01/0075-0083 -
Keywords
Ion bombardment ;thin films ;sheet-resistance ;sputtering ;implantation dose -
Abstract
Resistance changes in thin films of copper, aluminium and bismuth have been studied under the bombardment of nitrogen, carbon and argon ions. Variations in resistance with implantation dose have been observed upto doses of ∼ 3 × 1017 ions/cm2 for ion energies in the range 40 to 120 keV. The results are discussed in terms of desorption of gases from the film and a composite action of sputter removal of the film and its structural changes upon ion bombardment. A simple theoretical model is discussed which can qualitatively explain the experimental observations.
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Author Affiliations
S B Ogale1 S V Ghaisas1 A S Ogale1 V N Bhoraskar1 M R Bhiday1
- Department of Physics, University of Poona, Pune - 411007, India
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Dates
- Published
- July 1980
- Manuscript received
- 26 November 1979
- Manuscript revised
- 24 May 1980
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