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Temperature dependence of positron lifetime in GaAs crystals with defects
A Bharathi K P Gopinathan C S Sundar B Viswanathan
Solids Volume 13 Issue 6 December 1979 pp 625-636
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https://www.ias.ac.in/article/fulltext/pram/013/06/0625-0636 -
Keywords
Positron annihilation ;lifetime ;low temperature ;gallium arsenide ;defects ;trapping model ;diffusion -
Abstract
Positron lifetime has been measured as a function of temperature in Sidoped GaAs single crystals subjected to various heat treatments. Defects produced by these heat treatments trap positrons. In all the GaAs samples containing defects positron lifetime was found to decrease with temperature in the range from 375 K to 16 K. The decrease is explained as due to the decrease in the trapping rate. The trapping rate is mainly controlled by the diffusion of the positron to the trap. The diffusion constant is determined mainly by the scattering from charged Si impurities.
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Author Affiliations
A Bharathi1 K P Gopinathan1 C S Sundar1 B Viswanathan1
- Reactor Research Centre, Kalpakkam - 603 102
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Dates
- Published
- December 1979
- Manuscript received
- 24 August 1979
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Pramana – Journal of Physics
Volume 96, 2022
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