• Fulltext

       

        Click here to view fulltext PDF


      Permanent link:
      https://www.ias.ac.in/article/fulltext/pram/013/06/0625-0636

    • Keywords

       

      Positron annihilation; lifetime; low temperature; gallium arsenide; defects; trapping model; diffusion

    • Abstract

       

      Positron lifetime has been measured as a function of temperature in Sidoped GaAs single crystals subjected to various heat treatments. Defects produced by these heat treatments trap positrons. In all the GaAs samples containing defects positron lifetime was found to decrease with temperature in the range from 375 K to 16 K. The decrease is explained as due to the decrease in the trapping rate. The trapping rate is mainly controlled by the diffusion of the positron to the trap. The diffusion constant is determined mainly by the scattering from charged Si impurities.

    • Author Affiliations

       

      A Bharathi1 K P Gopinathan1 C S Sundar1 B Viswanathan1

      1. Reactor Research Centre, Kalpakkam - 603 102
    • Dates

       
  • Pramana – Journal of Physics | News

    • Editorial Note on Continuous Article Publication

      Posted on July 25, 2019

      Click here for Editorial Note on CAP Mode

© 2017-2019 Indian Academy of Sciences, Bengaluru.