• Computer simulation of back sputtering and ion penetration into polycrystalline targets

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      https://www.ias.ac.in/article/fulltext/pram/010/05/0497-0504

    • Keywords

       

      Computer simulation; back sputtering; ion penetration

    • Abstract

       

      In the present work computer simultations of the back sputtering of low energy neon ions with low impact parameter and the penetration of the same for higher values of the impact parameter have been performed. Initial ion energies in the range 100 to 500 eV and impact parameters in the range 0<p⩽0.61 Å have been used. Assuming a binary collision model and for the interatomic potential the Leibfried-Oen matching potential, we compute the complete collision cascade. For Ne+-Cu interaction, the sputtering threshold energy is found to be 125 eV and the sputtering yield increases with the ion energy. The sputtering yield versus ion energy is plotted and is found to agree well with experiment. It is seen that the back scattering is confined to small impact parameters justifying the use of the binary collision model.

    • Author Affiliations

       

      R Shanta1 2

      1. Department of Physics, Indian Institute of Technology, Bombay - 400 076
      2. Physics Department, Bhavan’s College, Bombay - 400 058
    • Dates

       
  • Pramana – Journal of Physics | News

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