Pressure effects on the semiconductor-semimetal transition in Ti2O3
B Viswanathan S Usha Devi C N R Rao
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Hydrostatic pressure has negligible effect on the resistivity anomaly and thecH/aH ratio of Ti2O3. The results are consistent with the band-crossing mechanism wherein the aT and eT bands cross as thecH/aH ratio increases.
B Viswanathan1 S Usha Devi2 C N R Rao1
Volume 97, 2023
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