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    • Fulltext

       

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      Permanent link:
      https://www.ias.ac.in/article/fulltext/pram/001/01/0048-0052

    • Keywords

       

      Semiconductor-metal transition; pressure effects on Ti2O3

    • Abstract

       

      Hydrostatic pressure has negligible effect on the resistivity anomaly and thecH/aH ratio of Ti2O3. The results are consistent with the band-crossing mechanism wherein the aT and eT bands cross as thecH/aH ratio increases.

    • Author Affiliations

       

      B Viswanathan1 S Usha Devi2 C N R Rao1

      1. Department of Chemistry, Indian Institute of Technology, Kanpur - 208016
      2. Materials Science Division, National Aeronautical Laboratory, Bangalore - 560017

    • Dates

       
      Published
      July 1973
      Manuscript received
      7 May 1973

  • Pramana – Journal of Physics | News

    • Editorial Note on Continuous Article Publication

      Posted on July 25, 2019

      Click here for Editorial Note on CAP Mode

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