• Raman scattering in narrow-gap semiconductors

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      Permanent link:
      https://www.ias.ac.in/article/fulltext/jcsc/102/05/0607-0611

    • Keywords

       

      Raman scattering; narrow gap semiconductors; plasmon-LO phonon coupling modes; TO phonons

    • Abstract

       

      Raman scattering by phonons has been measured in a narrow-gap semiconductor, ZnxHg1-xSe, withx = 0 to 0.4 near the E11 energy gap at room temperature. Plasmon-LO phonon coupling modes have been explained by a model taking into account the two-mode behaviour of TO phonons. The photon energy dependence of scattering intensity has shown a strong enhancement near the E1 + Δ1 energy gap. The experimental results have been compared with those of Raman scattering, far-infrared reflection and ellipsometric measurements.

    • Author Affiliations

       

      Kenji Kumazaki1

      1. Hokkaido Institute of Technology, Teine, Sapporo - 006, Japan
    • Dates

       
  • Journal of Chemical Sciences | News

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