Raman scattering in narrow-gap semiconductors
Raman scattering by phonons has been measured in a narrow-gap semiconductor, ZnxHg1-xSe, withx = 0 to 0.4 near the E1+Δ1 energy gap at room temperature. Plasmon-LO phonon coupling modes have been explained by a model taking into account the two-mode behaviour of TO phonons. The photon energy dependence of scattering intensity has shown a strong enhancement near the E1 + Δ1 energy gap. The experimental results have been compared with those of Raman scattering, far-infrared reflection and ellipsometric measurements.
Volume 134, 2022
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