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    • Raman scattering of ZnSe grown by molecular beam epitaxy

      K Kumazaki K Imai

      Volume 102 Issue 5 October 1990 pp 593-599

    • Fulltext

       

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      Permanent link:
      https://www.ias.ac.in/article/fulltext/jcsc/102/05/0593-0599

    • Keywords

       

      Raman scattering; ZnSe thin films on GaAs; molecular beam epitaxy; LO phonon spectra

    • Abstract

       

      LO phonon frequency of ZnSe thin films on GaAs grown by molecular beam epitaxy (MBE) has been measured from 20 to 300 K by Raman scattering. Frequency shift of the ZnSe LO phonon is estimated in terms of elastic strains due to lattice mismatch and thermal strains due to the difference in thermal expansion coefficients of film and substate. Strains due to lattice mismatch for thin films are dominant at high temperatures, while thermal strains due to large differences between growth and measurement temperatures are dominant at low temperatures. Temperature dependence of full witdh at half maximum (FWHM) in LO phonon spectra of ZnSe are discussed in terms of imperfection and phonon contribution.

    • Author Affiliations

       

      K Kumazaki1 K Imai1

      1. Hokkaido Institute of Technology, Teine, Sapporo - 006, Japan

    • Dates

       
      Published
      October 1990

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