We investigate stimulated Brillouin scattering (SBS) in doped nearly centrosymmetricn-type crystals liken-InSb andn-GaAs irradiated by pulsed high power lasers. The origin of the nonlinear interaction is considered to be in the third-order optical susceptibility arising due to both induced nonlinear current density and electrostriction. Using electromagnetic treatment, we have obtained the threshold condition for the onset of SBS and the effective Brillouin susceptibility X_B,eff,as well as the resulting gain constant (g_B)_eff for both lightly and heavily doped semiconductors. The detailed numerical analyses carried out favour heavily doped crystals to achieve high gain in the Stokes’ component of the scattered electromagnetic mode. The analyses support the possibility of occurrence of optical phase conjugation via stimulated Brillouin scattering in selected doped semiconductors.

Numerical estimates made for a specific crystaln-InSb at 77 K using a pulsed 10–6 μm CO₂ laser, establish its potential as candidate material for fabrication of phase conjugate mirrors when the crystal is heavily doped.