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      Permanent link:
      https://www.ias.ac.in/article/fulltext/boms/046/0060

    • Keywords

       

      Epitaxial graphene; graphite crucible; Ar gas flow rate; SiC.

    • Abstract

       

      Finite element methods based numerical simulations and experiments are conducted to systematically investigate the influence of temperature distribution and working gas flow to the growth of epitaxial graphene on SiC. It demonstrates the key role of temperature uniformity on the sample, which determines the coverage rate and quality of the grown graphene, as well as Ar flow for regulating the silicon partial vapour pressure. An optimized crucible was designed accordingly, which is successfully applied to prepare high coverage epitaxial graphene on the (0001) facet of SiC with great uniformity. Those insights might benefit the large-area high-quality epi-graphene growth for future industrial applications.

    • Author Affiliations

       

      ZHENZHEN ZHANG1 DONGXUN YANG1 GANG DONG1 RUI LI1 YI ZHANG1 RAMIRO MORO1 YANQING MA1 2 LEI MA1

      1. Tianjin International Center for Nanoparticles and Nanosystems, Tianjin University, Tianjin 300072, China
      2. State Laboratory of Precision Measuring Technology and Instruments, Tianjin University, Tianjin 300072, China

    • Dates

       
      Published
      27 March 2023
      Manuscript received
      16 September 2022
      Accepted
      4 December 2022
      Final version published online
      27 March 2023

    • Supplementary Material

       

  • Bulletin of Materials Science | News

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    • Editorial Note on Continuous Article Publication

      Posted on July 25, 2019

      Click here for Editorial Note on CAP Mode

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