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      Permanent link:
      https://www.ias.ac.in/article/fulltext/boms/046/0052

    • Keywords

       

      Electrical properties; (Hf, Zr)O$_2$; electro-ceramics; ferroelectric materials.

    • Abstract

       

      Hf$_x$Zr$_{1-x}$O$_2$ (HZO) ceramics with x = 0.25, 0.50 and 0.75 were prepared by conventional solid-state reaction technique. Structural studies of the synthesized stoichiometric compounds were done by X-ray diffraction. The microstructure/morphology and composition of ceramics were obtained with field emission-scanning electron microscopy and energy dispersive X-ray, respectively. Impedance spectroscopic studies were done to study the temperature-dependentand frequency-dependent dielectric properties. The dielectric constants at 10 kHz of Hf$_x$Zr$_{1-x}$O$_2$ ceramics were increased from 17 to 40 with Hf varying from 0.25 to 0.75 at ambient conditions. Ferroelectric studies were also done on these compositions with the help of a polarization-electric field plot and are discussed.

    • Author Affiliations

       

      URVASHI SHARMA1 CHARANJEET SINGH2 3 VISHNU M VARMA4 GULSHAN KUMAR5 6 SACHIN MISHRA1 ASHOK KUMAR2 REJI THOMAS4 5

      1. School of Electronics and Electrical Engineering, Lovely Professional University, Jalandhar 144411, India
      2. CSIR-National Physical Laboratory, Dr. Krishnan Marg, Delhi 110012, India
      3. Academy of Scientific and Innovative Research (AcSIR), Ghaziabad 201002, India
      4. School of Chemical Engineering and Physical Sciences, Lovely Professional University, Jalandhar 144411, India
      5. Division of Research and Development, Lovely Professional University, Jalandhar 144411, India
      6. School of Computer Science and Engineering, Lovely Professional University, Jalandhar 144411, India

    • Dates

       
      Published
      27 March 2023
      Manuscript received
      8 August 2022
      Accepted
      6 November 2022
      Final version published online
      27 March 2023

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