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Preparation and characterization of SbAs nanorods for opto-electronics applications
V ASVINI G SARAVANAN R K KALAIEZHILY K RAVICHANDRAN
Volume 46 Published: 13 January 2023 Article ID 0010
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https://www.ias.ac.in/article/fulltext/boms/046/0010 -
Keywords
Nanorods ;solvothermal ;semi-metal ;topological insulator. -
Abstract
Polycrystalline SbAs nanorods were synthesized by the simple solvothermal method. X-ray diffraction analysis of prepared SbAs confirmed the formation of rhombohedral structure and the average crystallite size of ${\sim}$9 nm. Nanorods shaped morphology of SbAs polycrystalline was studied using high-resolution scanning electron microscopy analysis. The optical bandgap energy of 3.58 eV was determined from UV–visible spectrum with absorption maximum at 226 nm. An uncommon and fascinating potential-induced semiconductor to insulator-like transition is determined within the frequency-dependent real and imaginary part of impedance, dielectric plot and modulus plot. The direct bandgap of prepared SbAs nanorods made it applicable in opto-electronic devices.
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Author Affiliations
V ASVINI1 G SARAVANAN R K KALAIEZHILY K RAVICHANDRAN
- Department of Nuclear Physics, University of Madras, Chennai 600 025, India
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Dates
- Published
- 13 January 2023
- Manuscript received
- 11 December 2020
- Accepted
- 3 September 2022
- Final version published online
- 13 January 2023
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Bulletin of Materials Science
Volume 46, 2023
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